| 摘要 |
PURPOSE:To enable ion bombardment of a substrate plate at an optional time during vapor deposition by a mechanism wherein, in a position opposed to a substrate plate supporting table, an ion gun capable of taking out an inert or active gas or electron is arranged whithin a high vacuum tank. CONSTITUTION:After a vacuum tank 1 receiving a substrate plate supporting table 3 setting a substrate plate is evacuated to a high vacuum degree, ion or electron of an inert or active gas is irradiated to a substrate plate by an ion gun 11 or 11' (11 is a plasma generating chamber, 11' is a take-out electrode) and an evaporating source 5 is evaporated to coat a substrate plate. The accerelation of ion or electron is carried out by applying DC or AC voltage to take-out electrode 11' by an electric source 5 and the pressure whithin a vacuum tank 1 during ion bombartment is below 5-10<-4> Torr. After bombardment, a gas flow from a gas introducing port 13 is sttoped and, immediately after, a shutter 6 is opened to evaporate an evaporating source 5 in order to coat a substrate plate. |
