| 摘要 |
PURPOSE:To obtain a semiconductor laser, in which a short-circuit does not occur even on junction-down assembly, by forming a p-conductivity type GaAs contact layer having a thickness larger than a specific value and a carrier concentration larger than a specific value as an uppermost layer in a semiconductor epitaxial layer. CONSTITUTION:In a buried ridge type self-alignment semiconductor laser shaped onto a GaAs substrate 1 having an n-type conductivity type, a p-type conductivity type GaAs contact layer 60 having thickness of 2mum or more and carrier concentration of 4X10<18>cm<-3> or more is formed as an uppermost layer in a semiconductor epitaxial layer. The buffer layer 2, a first clad layer 3, an active layer 4, a second clad layer 5 having a striped ridge section 8 and a current block layer 7 are shaped onto the substrate 1, and the p-type GaAs contact layer 60 is formed onto the layer 7 through the thermal decomposition method of an organometal by using dimethlzinc as a p-type dopant. Accordingly, the generation of a short circuit due to the protuberance of a solder material 10 can be inhibited on junction-down assembly. |
