| 摘要 |
PURPOSE:To simplify sealing by the method wherein a wiring layer is provided on an insulator substrate and a depression in the center of its surface, while a semiconductor element is fitted to this depression through the intermediary of a semiconductor support and wiring is arranged, and then is sealed by placing a cap on it. CONSTITUTION:In the center of the surface of ceramic base 4 is provided a depression to fit semiconductor element 1. On its bottom is formed Au metallized layer 5. On the surface of this neighborhood is provided lead 6 via low melting point glass 10. Next, element 1 is mounted on mettalized layer 5 in the depression. But, at this time, flat Mo plate 7, whose front and back sides are plated with Au, is fixed on layer 5 by using Au-Si wax. Subsequently, element 1 is fixed on Mo plate 7 by using Au-Si wax, and this is connected to lead 6 by means of fine Al wire 8. Ceramic cap 9 is placed on lead 6 by means of low melting point glass 10, and is sealed. In this way, sealing is simplified, and at the same time, the flatness of element 1 is improved by providing Mo plate 7. |
