| 摘要 |
PURPOSE:To increase the performance and yield of a semiconductor integrated circuit, by forming a one electric conductive-type high density layer in a small area near an SiO2 film in a one electric conductive-type Si element substrate. CONSTITUTION:A p-type Si element substrate 51 is oxidized to form an SiO2 film 53. In like manner, an n<+> or p<+> type Si supporting substrate 61 is oxidized to form an SiO2 film 63. At this time, the SiO2 film formed on the Si element substrate 51 should be as thin as possible and the SiO2 film 63 formed on the Si supporting substrate 61 should be as thick as possible in order to heighten the effect of a fixed electric charge to be applied afterward. Nextly, B, BF2, Ga or other material which becomes a p-type impurity in a semiconductor is put in the SiO2 film formed on one side of the Si element substrate 51 which is stuck together with the Si supporting substrate 61, to form a negative fixed electric charge. By this method, there is no need of a power supply when the Si supporting substrate is negatively biased. Also, the high performance and yield of an integrated circuit can be gained since only a shallow diffusion is required for formation of a one electric conductive type high-density layer. |
