发明名称 METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To correct defective products and use them by a method wherein a defective substrate coated with a positive resist is subjected to step-and-repeat by using a corrective reticle larger than a defect, after it is developed, the defect is removed. CONSTITUTION:Required pattern 2 and defective parts 3, 4 exist in the chip pattern region. For correction, first, a corrective reticle larger than the size of the defect is formed. On the other hand, for the defective substrate, a positive resist film is formed to cover pattern 2. Reticles 5, 5' and the defective substrate are fitted to the step-and-repeater. After they are subjected to repeat exposure, they are developed. By this, defects 3, 4 of the substrate are exposed and the remaining part is covered with resist film. Next, by sputtering, the substrate having defects 3, 4 is provided with a film of the same chip pattern as used. After this, the resist film is removed, and the defective parts are filled.</p>
申请公布号 JPS55108737(A) 申请公布日期 1980.08.21
申请号 JP19790015599 申请日期 1979.02.13
申请人 FUJITSU LTD 发明人 NAGANAMI TSUNEHIRO;KAWAMURA NOBUKI
分类号 G03F1/00;G03F1/72;H01L21/027;H01L21/30 主分类号 G03F1/00
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