| 摘要 |
PURPOSE:To obain a large high frequency output by a method wherein inductance is reduced by improving a bonding pad portion of a gate electrode in a FET and by shortening the distance between an earthing portion and an active portion. CONSTITUTION:In an FET having a mesa active region 1, source electrode 2, source contact window 2A, drain electrode 3, drain contact window 3A and gate electrode 4, the mesa active region 1 is divided into 1A, 1B, then a bonding pad 4' of the gate electrode 4 is provided in the space formed between 1A and 1B. Since the pad 4' does not protrude from the structure like the teeth of a comb according to this constitution, it is possible to extremely shorten the distance between the active portion and the earthing portion. |
