FORMING METHOD OF MINUTE PATTERN

摘要

PURPOSE:To facilitate the forming of minute and high dense pattern by limiting the incidence angle of ion beam within 30 degrees or below while a sample is turned in the ion etching means of semiconductor integrated circuits. CONSTITUTION:A treated material 12 is attached on the substrate 11 to form a mask pattern 13 on the surface. While turning the substrate 11, slanting incident angle etching is performed by the ion beam with the angle theta of 30 deg. or below to form a pattern 31 which leaves a mask material 32. The mask material 32 shall be eliminated.