| 摘要 |
<p>Method of producing an insulating film for semiconductor surfaces, in which a silicon substrate is subjected to direct nitriding to thereby produce a film of silicon nitride. The silicon substrate is first subjected to a direct heat-nitriding treatment to produce a relatively thick film of silicon nitride. The silicon substrate is then subjected to a nitriding treatment in aqueous ammonia or an inert gas atmosphere containing gaseous ammonia, thereby to produce a dense and relatively thick film of silicon nitride. The resultant film of silicon nitride is useful for an insulating film for semiconductor devices and also a mask for impurity diffusion or selective oxidation in the production of the semiconductor devices. </p> |
