Forming narrow line width patterns by electron beam irradiation - using surface migratable resist and pref. non-back-scattering substrate

摘要

In formation of patterns by electron beam irradiation of resist, the resist is a surface migratable resist provided in thickness less than thickness required for pattern formation. Pref. the resist is formed on a thin film substrate supported by a non-electron backscattering substrate. The resist is exposed to a focussed electron beam to convert and fix the resist until the required pattern thickness is reached. Exposure duration control is esp. achieved by monitoring electron scattering by the converted and fixed resist. The nonelectron backscattering substrate is pref. Si, Si3N4, SiO2, Al2O3, polyimide, collodion or C. The resist is organic material, esp. silicone oil or tetraphenyl-tegramethyl-trisiloxane. Pattern line widths 100A can be formed as method avoids raggedness at the edges and provides control of pattern thickness and width. The resist pattern is useful in electrical contact control and light modulation, and may be used in situ, or may be used to transfer the pattern to another substrate for device formation using 20-50A X-ray irradiation.