| 摘要 |
<p>An improved field effect transistor sense amplifier uses a cross-coupled pair of first transistors (Q1, Q2) with separate third and fourth transistors (Q3, Q4) connected by the sources to each of one of cross-coupled terminals (12, 14) of the cross-couples pair (Q1, Q2). Read circuitry (Q7, Q8) is connected directly to the cross-coupled terminals (12, 14) of the cross-coupled pair. Write circuitry (Q9, Q10) is connected to the drains (18, 22) of the third and fourth transistors (Q3, Q4). The improved digital sense amplifier circuit reduces memory access and cycle times and reduces the magnitude of current spikes. </p> |
