Forming irradiated regions in semiconductor bodies by nuclear radiation.

摘要

irradiated regions (28) are formed in materials such as semiconductor bodies by nuclear radiation (23') where the irradiated regions (28) are of a desired thickness, dosage and dosage gradient, a desired distance from a selected surface (11) of the material. A nuclear radiation beam (23') from a given radiation source radiating particles with molecular weight of at least one (1) is provided that can penetrate the material through a selected surface (11) to a depth greater than the maximum depth of the irradiated region from the selected surface. A beam modifier (26) of a given material and non-uniform shape to modify the energy of the radiation beam (23) is interposed between the source and the material to form a transmitted radiation beam (23') capable of forming an irradiated region (28) of a desired thickness and dosage gradient in the material a given distance from the selected surface on irradiation of the material through the selected surface (11) with the transmitted radiation beam.