发明名称 BISMUTH-GERMANIUM-OXIDE MATERIAL
摘要 A monocrystalline Bi2Ge3O9 is formed, for example, via the Czochralski technique from a melt containing pure Bi2O3 and GeO2 at a molecular ratio of 1:3. This crystal is useful as an x-ray spectrometer crystal and/or as a light defector crystal in conjunction with an ultrasonic deflection field properly applied to such crystals.
申请公布号 GB2039868(A) 申请公布日期 1980.08.20
申请号 GB19800001432 申请日期 1980.01.16
申请人 SIEMENS AG 发明人
分类号 C01G29/00;C30B15/00;G21K1/06 主分类号 C01G29/00
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