| 发明名称 |
(1-X)BAO.XTIO2 SYSTEM DIELECTRIC MATERIAL PARTICULARY FOR USE IN A MICROWAVE DEVICE |
| 摘要 |
The present invention provides a dielectric material adapted for microwave integrated circuits (MIC) and an electric circuit making use of said dielectric material. More particularly, an oxide dielectric material principally consisting of (1-x)BaO.xTiO2 (0.7</=x</=0.95) and containing both 0.007 to 0.7 weight % of manganese and 0.037 to 3.7 weight % of zirconium, has a large dielectric constant, a small dielectric loss and a small temperature coefficient of dielectric constant and is uniform over a broad range, and especially it is possible to easily manufacture a substrate having a uniform dielectric constant and a uniform dielectric loss. Transistors and MIC's employing such substrates can attain uniform and excellent high-frequency characteristics. |
| 申请公布号 |
EP0014002(A3) |
申请公布日期 |
1980.08.20 |
| 申请号 |
EP19800100457 |
申请日期 |
1980.01.29 |
| 申请人 |
NEC CORPORATION |
发明人 |
NOGUCHI, TSUTOMU C/O NIPPON ELECTRIC COMPANY LTD.;KAJIWARA, YUJI C/O NIPPON ELECTRIC COMPANY LTD.;SUZUKI, MASANORI C/O NIPPON ELECTRIC COMPANY LTD.;TAKAMIZAWA, HIDEO C/O NIPPON ELECTRIC COMPANY LTD. |
| 分类号 |
H05K1/03;C04B35/468;H01B3/12;H01L23/66;H03F3/195;H03F3/24 |
主分类号 |
H05K1/03 |
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