| 摘要 |
PURPOSE:To increase the uniformity in thickness of a metallizing film, by, in conducting sputtering-metallizing while moving relatively a masking shield and a substrate both arranged opposite to an evaporation source, constituting the masking shield in such a way that it hardly disorder the voltage distribution in a discharging space. CONSTITUTION:Substrates 3a, 3b, 3c, etc. are sputtering-metallized in an argon atmosphere while a substrate support 2 being revolved around a target electrode 1 with the target elctrode 1 and a masking shield 4 fixed. In that case, the masking shield is made of a heat-conductive metal, and a voltage corresponding to the voltage at its position in the discharging space is applied. Hereby, the disorder of electric field distribution in the discharging space is prevented, hence the temp. rise on the substrate surface is restrained, and a metallizing film of small scattering in metallizing film thickness is formed on the substrate surface. |
