发明名称 Apparatus for measuring semiconductor device resistance
摘要 A test structure for enabling the accurate measurement of the resistance characteristics of a semiconductor material, of the type which includes one or more pairs of electrical terminals disposed on the surface of the material to enable measurements of the resistance encountered by currents passed between the terminals. A pair of terminals includes a first terminal extending in a closed path, such as a circle, around a second terminal, so that all currents flowing between the terminals flows along a region of known width and length. Two or more pairs of concentric terminals can be utilized, wherein the ratio of radii of each pair of terminals is the same as the ratio for all other pairs of terminals, to facilitate the calculation of the contact resistance between each terminal and the semiconductor surface, as well as the calculation of the resistance of the semiconductor material apart from the effect of the terminal-to-semiconductor contact resistances.
申请公布号 US4218650(A) 申请公布日期 1980.08.19
申请号 US19780918534 申请日期 1978.06.23
申请人 U S OF AMERICA NASA ADMINISTRATOR 发明人 MATZEN, WALTER J
分类号 G01R27/02;G01R27/14;G01R31/26;(IPC1-7):G01R27/02 主分类号 G01R27/02
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