| 摘要 |
Switching of high voltage pulses (of the order of 10 kV) of durations from about 10 mu s (microseconds) to 10ms (milliseconds) with picosecond accuracy is accomplished by a laser activated semiconductor switch made up of a body (18) of high resistivity semiconductor material, such as nearly intrinsic silicon, integrated into a wide band (10GHz) geometry, which is part of a transmission line (28). The high bias voltage pulses are obtained by charging the line in synchronism with the generation of the laser pulse. The high voltage bias pulse width can be typically in the range of 10 mu s- 10ms, and the length of the body (18) is selected so as to prevent thermal breakdown of the semiconductor with such pulse widths. The energy of the laser pulse switches the high voltage to produce a multikilovolt output pulse suitable for driving devices, such as streak cameras or Pockels cells, by the same laser, which need to be synchronized with picosecond accuracy to the laser pulse. The length of the transmission line may be varied to adjust the width of the multikilovolt output pulse.
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