| 摘要 |
Integrated circuit complementary transistors for high voltage switching applications are fabricated in separate dielectrically-isolated pockets (12), (14) of high resistivity silicon, supported in a conductive medium (11) such as polycrystalline silicon, using surface adjacent conductivity type zones constituting emitter (19), (23), base (16), (20) and collector zones (17), (21). In one embodiment using high resistivity (75-300 ohm cm) silicon, referred to as pi material, for the material of the pocket, one transistor is a PN pi P device, and the other is an NP pi N. In the PN pi P the reverse-biased base-collector pn junction is the interface between the N base zone (16) and the pi portion (12) of the collector zone. In the NP pi N transistor the base-collector junction is the interface between the lightly doped pi extension (14) of the base zone (20) and the N collector zone (21). A connection (32) is provided to the conductive substrate to enable application of a suitable potential thereto. |
