| 摘要 |
PURPOSE:To decrease the crystal impedance as well as increase the driving efficiency for the crystal oscillator which is formed through photo etching, by specifying both the electrode structure and the thickness of the electrode film each. CONSTITUTION:For crystal plate 1, the length is set to 5mm or less along with the thickness set to 0.05-0.3mm. And the width of electrode 2-2 on the main surface is set to 70-90% the width of the crystal plate with installation of the electrode featuring the width of 100% the thickness of the side surface. In such constitution, the crystal oscillator is formed through photo etching. For such crystal oscillator, the electric field is applied over the entire inside of the crystal at the exciting time, thus featuring the high driving efficiency and low crystal impedance each. The film thickness of the electrode is set to about 300-30000Angstrom since the too small and large thickness of the film cause the incomplete connection and the large resistance respectively to increase the impdance in both cases. |
