| 摘要 |
PURPOSE:To obtain a nonvolatile memory in which the addressing is easy and the write-erase for each address can be performed by means of a single electrode potential. CONSTITUTION:The n-type drain 2 of FET for selecting the address and the sources 3, 4 that are used in common with the drain of storing FET are formed in the p-type Si substrate, the gate 6 and floating gate 7 are made through the gate oxide film 5, and a specially thin oxide film 8 is formed at one end of the floating gate 7. The control electrode 9 of Al is provided on the gate 7 through the thermal oxide film, the electrodes 10, 11 are also made on the layers 2, 4. To write the data, the electrode 11 is grounded and the ones 6, 9, 10 are made positive high potentials, and to erase the data, the electrode 9 is grounded and the ones 6, 10 are made positive high potentials. To read (i, j) in the cell array, it is done by corresponding itself to the binary information in the state of nonconduction when written and in the state of conduction when erased by applying a positive voltage which is less than the threshold of the state wherein the data is written in the bit wire j and word wire i, i', and is higher than the threshold when erased, and by which the charge can not be moved. |
