| 摘要 |
<p>A semiconductor switch device comprising a semiconductor body (10), a pair of main electrodes (12, 14) and a control electrode (13), the body consisting of a first region (20) of n<+>-type conductivity, a second region (15) of p<+>-type conductivity, both first and second regions being in contact with one main electrode (12), a third region (16) of n<->-type conductivity, a fourth region (17) of p-type conductivity, and a fifth region (19) of n-type conductivity, the fourth region being sandwiched between the third and fifth regions except inthe vicinity of the second region, said semiconductors regions thereby constituting a p-n junction diode and a bipolar transistor arranged adjacent each other within the semiconductor body (10) so that their conductive directions are equal. One electrode of the diode and an emitter (or collector) electrode of the transistor, and the other electrode of the diode and the collector (or emitter) electrode of the transistor are respectively formed continuously as the pair of main electrodes. Separately, a base electrode of the transistor is formed as the control electrode. This semiconductor switch device has a higher break-down voltage than a conventional transistor, and can control high power with low control power. It also has a shorter turn-off time than a conventional field controlled thyristor.</p> |
