| 摘要 |
PURPOSE:To form a translucent pattern with a simple stage so that the fine pattern having high accuracy is obtd. by providing the oxide film layer of molybdenum silicide on a light transparent substrate by a sputtering method, thereby forming a see-through mask blank. CONSTITUTION:The see-through mask blank 10 is produced by forming the oxide film layer of the molybdenum silicide on the light transparent substrate 1 by the sputtering method utilizing gaseous argon contg. gaseous oxygen. The ratio to the oxygen partial pressure in the gaseous argon to the total pressure is designated as gamma and the power of the sputtering as Qkw and the sputtering is preferably so executed that the value satisfies the inequality gamma<=9/25Q. The translucent pattern is thus formed by the simple stage by subjecting the oxide film layer 6 of the molybdenum silicide to dry etching by using the resist pattern. The fine pattern having the high accuracy is thus obtd. |
