| 摘要 |
<p>PURPOSE:To obtain semiconductor elements of a specified shape effectively, in the case a number of semiconductor elements formed in a semiconductor wafer are divided, by forming grooves in the surface on one side by laser machining and performing dying from the opposite points of the surface of the other side. CONSTITUTION:An n<->-layer 12 is grown on an n<+> semiconductor wafer 11, a plurality of p-type regions 13 are diffused and formed in the said layer 12, and a plurality of diodes 19 are provided. An Ag-plated layer 18 is deposited on the bottom surface of a substrate 11 so as to oppose the portions described above via an Au layer 17. An SiO2 film 14 is provided on the upper surface, a window is provided, and an Ag bump electrode 16 is provided on the region 13 via an Au layer 15. Then, individual diodes 19 are separated. At this time, at first grooves 20 are made in separating regions at the bottom surface of the substrate by laser machining, and all the surface is covered by bonding tape 22. Then, an errosion-resistant wax film 21 is provided on the upper surface. Grooves 23 reaching the grooves 20 are cut from the points on the film 21 corresponding to the grooves 20 in the bottom surface with a dying saw, and division into individual pieces is achieved. Thereafter, a small amount of etching is performed and machining strain is removed.</p> |
