发明名称 |
Static induction transistor |
摘要 |
A static induction transistor having a channel region between a gate region and a source region of the transistor. Current flowing from the drain region to the source region through the channel region is controlled by a voltage applied to the gate region. An impurity region having a conductivity type opposite that of the channel region is formed in the channel region and is effective to decrease the channel current which will flow when the gate region is biased by a low voltage.
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申请公布号 |
US4216490(A) |
申请公布日期 |
1980.08.05 |
申请号 |
US19780891286 |
申请日期 |
1978.03.28 |
申请人 |
DAINI SEIKOSHA K K |
发明人 |
OHKI, TOSHIMI |
分类号 |
H01L29/80;H01L21/331;H01L21/8222;H01L27/02;H01L27/06;H01L29/10;H01L29/73;H01L29/739;H03K19/094;(IPC1-7):H01L27/02 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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