发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To cause an output load to be seen small according to output rise by using an insulating gate-type FET to control charging and discharging of required nodes in the inverter which converts the level of a prescribed external clock. CONSTITUTION:The level of the clock of a transistor logical level applied from the external to MOSFETQ3 of an insulating gate-type FET is converted to the level of clock phiS of the MOS transistor from node 2 connected to bootstrap capacity C1F between MOSFETQ2, which has the source connected to power source VDD, and MOSFETQ4, which has the gate connected to node 4 between MOSFETQ4 and Q6. The gate of MOSFETQ6 is connected to MOSFETQ7 and Q8 through node 5 similarly, and node 5 rises according as conversion clock phiS rises, and node 4 is discharged through FETQ6, and FETQ4 becomes almost non-conductive. Consequently, the load capacity is seen small from node 2, so that the rise speed of conversion clock phiS after that can be enhanced.
申请公布号 JPS55101188(A) 申请公布日期 1980.08.01
申请号 JP19790006931 申请日期 1979.01.23
申请人 NIPPON ELECTRIC CO 发明人 OSAMI AKIRA
分类号 G11C11/417;G11C11/407;G11C11/4076;H03K19/0185;H03K19/096 主分类号 G11C11/417
代理机构 代理人
主权项
地址