发明名称 SPUTTERING APPARATUS
摘要 PURPOSE:To obtain high quality film by DC double-pole sputtering by applying negative bias voltage to the base plate holder of the apparatus. CONSTITUTION:In a DC double-pole sputtering apparatus in which a discharge- stabilizing grid is provided between the target holder 1 and the base plate holder 3, the cathode side of the bias power source VB is connected to the base plate holder 3 and the anode side is earthed. When applying negative bias voltage to the base plate holder 3, the surface of film is purified by the impaction of ion and thereby the characteristic properties of a film, e.g., tantalum nitride, etc., formed by sputtering can be raised.
申请公布号 JPS55100979(A) 申请公布日期 1980.08.01
申请号 JP19790006839 申请日期 1979.01.23
申请人 GEN CO LTD 发明人 IMAOKA EIICHIROU;UEMA TSUNEAKI
分类号 C23C14/34;C23C14/38;C23C14/50;H01J37/34 主分类号 C23C14/34
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