发明名称 TRANSISTOR DIFFERENTIAL AMPLIFIER CIRCUIT
摘要 PURPOSE:To improve high-frequency characteristics by providing a npn transistor in front of each pnp differential transistor. CONSTITUTION:To the base and emitter of a differential amplifier composed of pnp transistors Q1 and Q2 with their emitters connected in common, npn transistors Q3 and Q4 are connected at emitters and collectors respectively. Applying an input signal to npn transistors forms positive feedback loops between pnp transistors and npn transistors. As a result, even if pnp transistors low in high-band cut-off frequency would be used, characteristics can be improved extending to the high frequency range by npn transistors. Therefore, a video detection output circuit, etc., can be realized by using pnp lateral transistors.
申请公布号 JPS55100711(A) 申请公布日期 1980.07.31
申请号 JP19790007076 申请日期 1979.01.26
申请人 HITACHI LTD;HITACHI OME ELECTRONIC CO 发明人 YAMAMOTO MOROHISA;NUNOKAWA YASUHIRO;KADOKAWA SHIGERU
分类号 H03F3/45;(IPC1-7):03F3/45 主分类号 H03F3/45
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