Silicon carbide substrate prodn. - by chemical vapour deposition of seed crystal film and liquid phase epitaxy, useful for semiconductor and opto-electrical transducer

摘要

Prodn. of a SiC substrate involves depositing a SiC seed crystal film on a Si substrate plate with a pure surface, followed by epitaxial growth by contact with molten Si contg. C. SiC can crystallise in various forms with a band sepn. between 2.4 and 3.3 eV, is stable thermally, chemically and physically and resistant to high energy particulate radiation. Substrates of the p- and n-type can be obtd. reproducibly. It is useful as semiconductor for electronic components exposed to high temp. and radiation and with high power and high reliability. It is also useful for optoelectrical transducers for shortwave visible and UV light. SiC is free from environmental and raw material problems. The process gives a high yield of a substrate with controllable size and thickness.