发明名称 Monolithic integrated circuit - with buried insulation
摘要 <p>Semiconductor device, partic. a monolithic integrated circuit of the type comprising a monocrystalline substrate one face of which carries a semiconducting layer, divided into island zones each processed to form at least one circuit component, e.g. transister, diode, resistance, etc. and separated from each other by an insulating zone and insulated from the semiconductor by at least one pn-junction, with the improvement whereby the part of the insulating zone adjacent to the semiconducting layer is formed by an insulating layer embedded therein, while a semiconducting zone belonging to one island is electrically connected to a similar zone of an adjacent island by a connecting zone developed below the buried insulating zone and insulated from the substrate adjacent to the zones around these islands.</p>
申请公布号 NL8002038(A) 申请公布日期 1980.07.31
申请号 NL19800002038 申请日期 1980.04.08
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN TE EINDHOVEN. 发明人
分类号 H01L21/32;H01L21/74;H01L21/76;H01L21/762;H01L27/06;H01L29/06;(IPC1-7):01L21/314 主分类号 H01L21/32
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