摘要 |
<p>Semiconductor device, partic. a monolithic integrated circuit of the type comprising a monocrystalline substrate one face of which carries a semiconducting layer, divided into island zones each processed to form at least one circuit component, e.g. transister, diode, resistance, etc. and separated from each other by an insulating zone and insulated from the semiconductor by at least one pn-junction, with the improvement whereby the part of the insulating zone adjacent to the semiconducting layer is formed by an insulating layer embedded therein, while a semiconducting zone belonging to one island is electrically connected to a similar zone of an adjacent island by a connecting zone developed below the buried insulating zone and insulated from the substrate adjacent to the zones around these islands.</p> |