| 摘要 |
PURPOSE:To improve the rate of quality products in the manufacture of photodiodes and obtain a stable supporting structure, by forming an insulating film on a Si substrate by means of SiO2 film to be obtained by heat-oxidizing Si, instead of using an Al2O3 film. CONSTITUTION:The surface of Cu substrate 1 is plated with Au, And Si substrate 2, 160-180mum thick, is fitted on top of this by means of an Au-Si eutectic alloy. By heat oxidizing substrate 2 (1200 deg.CWet O2), SiO2 film, 10,000-12,000Angstrom , is formed. Cathode-anode wiring 4, connected by Au-evaporated film, 2mum thick, and Au plating, 4-6mum, GaAlAs chip 5, and Au external lead wire 7 are provided. The rate of defective insulation (10%) between anode-cathode and stem is reduced to zero, the junction with the Si substrate is improved, and the function of heat discharge is retained. |
