| 摘要 |
PURPOSE:To prevent the thermal deterioration of an indium phosphide substrate and epitaxial layer on the substrate in the epitaxial crystal growing method of compound semiconductors by keeping the indium phosphide substrate at 500-700 deg.C, flowing gases including phosphine around it and keeping the temperature on its upstream side at 750-900 deg.C. CONSTITUTION:Arranging a gallium boat 2 and an indium boat 3 in a main reaction pipe 1 and keeping these boats at temperature T1, gas mixture of hydrogen and hydrogen chloride is introduced from gas inlets 11, 12 to make it react and gallium chloride and indium chloride are flowed out. An indium phosphide substrate 5, a sample, is set on a sample holder 6 provided at the tip of a sample moving rod 7 equipped with a storing chamber cover 8 and stored in a sample storing chamber 4a. On the upstream of the chamber, a heating decomposition chamber of phosphine, 4b, is provided via a connecting part 4c, gas mixture of hydrogen, phosphine and arsine is introduced from an inlet 14 and the indium phosphide substrate 5 is epitaxially grown. |
