MANUFACTURE OF OPTICAL SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To enable a semi-insulating semiconductor to grow stably and simply as it is in a buried state by a method wherein the semi-insulating semiconductor doped with an element which forms a deep impurity level is provided near to an optical waveguide layer formed into a mesa shape, and the above element is introduced at a process that a high resistive semiconductor is buried. CONSTITUTION:Optical waveguide layers composed of an optical waveguide layer 3 and other optical waveguides formed of two or more clad layers 2 and 4 whose refractive indexes are smaller that of the waveguide 3 are provided, where at least the waveguide layer 3 out of the optical waveguides is formed into mesa form, and when an optical semiconductor element is manufactured through a process that a high resistive semiconductor 6 is buried into the side face of the optical waveguide layer 3, a semi-insulating semiconductor 12 doped with an element which forms a deep impurity level is disposed near to the optical waveguide layer 3 formed into a mesa shape, and the high resistive semiconductor 6 is buried into a part or the whole of the optical waveguide layer 3 by introducing the above element into a semiconductor of non-high resistance at a process that the high resistive semiconductor 6 is buried into a part or the whole of the side face of the waveguide layer 3.