| 摘要 |
A body of semiconductor material of a Group III-V compound or alloy of such compounds includes a substrate of one conductivity type with a pair of spaced, substantially parallel, dove-tail shaped grooves in a surface thereof. Over the surface of the substrate and the grooves are, in sequence, a first epitaxial layer of the one conductivity type, a second epitaxial layer which is the active recombination layer, a third epitaxial layer of the opposite conductivity type and a fourth epitaxial layer of the opposite conductivity type. The first and third layers are of a material forming heterojunctions with the second active layer. The second active layer has a region of uniform thickness directly over the space between the grooves. A stripe contact is provided on the fourth layer directly over the region of minimum thickness of the second active layer.
|
