| 摘要 |
An N- semiconductor layer is epitaxially grown on an N+ semiconductor substrate serving as a drain region and overlaid with an N type epitaxial layer. Two opposite P+ gate regions are disposed in the surface portion of the N layer to define a channel region between them, and an N+ source region is located above the channel region. That portion of the N layer located between each gate region and the N- layer has a thickness not smaller than one-half of the channel width of the channel region.
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