IRREVERSIBLE SEMICONDUCTOR SWITCHING ELEMENT AND SEMICONDUCTOR MEMORY DEVICE UTILIZING THE SAME

摘要

Specification Title of the Invention Irreversible Semiconductor Switching Element and Semiconductor Memory Device Utilizing the Same The switching element comprised a high resistivity polycrystalline silicon resistor whose resistance irreversibly decreases to a small value at a threshold voltage when the voltage across the resistor reaches the threshold voltage. A semiconductor memory devise is constituted by using the switching element as a memory cell, and a semiconductor gate element for controlling the current flowing through the semiconductor switching element. The switching element has simple construction and can operate with low voltage and low current. It is not necessary to blow fuse or destroy diode as in the prior art semiconductor switching element.