Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam

摘要

Low resistance, doped polycrystalline semiconductor connection patterns are fabricated by scanning a doped polycrystalline layer with a laser beam thereby increasing the crystal grain size, reducing defects in the grains, increasing charge carrier mobility and as a result reducing material resistivity. Semiconductor devices having increased circuit density and speed are realized through use of laser annealed polycrystalline semiconductor resistors, contacts and interconnections.