| 摘要 |
A semiconductor device is fabricated by a process in which an aperture (4) is an insulating layer (3) along a surface (2) of a semiconductor body is utilized in defining the lateral extents of zones (6, 7, and 8) in a circuit element of the device. In particular, the insulating layer is first provided with the aperture along the surface. A semiconductor layer (5) is formed on the insulating layer, including the portion within the aperture. Using the edge of the insulating layer along the aperture as a masking edge, a pair of opposite-conductivity dopants are introduced selectively into the aperture and a third dopant is introduced through all of the aperture into the body. The third dopant may be introduced into the body before the semiconductor layer is formed. |
