| 摘要 |
PURPOSE:To prevent the thermal fracture of target due to the rise of film-forming speed, etc., by interposing a low-melting Pb-Sn alloy layer between cathode and target. CONSTITUTION:A low-melting Pb-Sn alloy containing one or more of Zn, Sb, Al, Ti, Si, Cu, and Cd is rubbed on the surface of the cathode body 11, and also the low-melting alloy is rubbed on the surface of the target 17 of ceramic, glass, synthetic resin, etc. Then, the low-melting alloy layers 18 on the cathode body 11 side and the target 17 side are adhered to each other by heating and compression and then solidified by cooling to fix the target 17 to the cathode body 11. Thus, the thermal conductivity of the cathode body 11 and the target 17 is raised and the difference in thermal expansion between both is absorbed by the low-melting alloy layer 18, the thermal fracture of the target can be prevented even in case where high-frequency power is applied to the cathode body 11. |
