| 摘要 |
<p>Mask used in prodn. of electronic devices by X-ray lithography has an X-ray transparent membrane (II) on which absorber structures (III) are placed, with a supporting frame (IV) the membrane consisting of Si oxynitride (I). Frame (IV) can consist of monocrystalline Si and there is a p+-layer between the frame and the membrane (I), the p+-layer being a diffusion, epitaxial or polycrystalline p-Si layer. There is a SiO2 coating on the side away from the membrane. Alternatively, the frame consists of glass, quartz, ceramic material or polycrystalline Si. Membrane has a thin, optically transparent protective coating, which is etchable with difficulty, esp. a Si3N4 coating on one or both sides. Mask is useful in IC mfr. It has positive properties similar to those with a pure Si membrane and transparency for visible light corresp. to that of Si3N4, without comparable internal stress leading to self-destruction.</p> |
