Fabrication of injection lasers utilizing epitaxial growth and selective diffusion

摘要

Porous silica doped with zinc is used as a p-type dopant source in the construction of rib lasers. This is preferable to the method used in the parent case of growing a zinc doped layer because epitaxial growth is liable to be accompanied by zinc diffusion into regions where it is not required. Other modifications include allowing the zinc diffusion to go right through the active layer and to dimension the device so that lateral optical guidance is unaffected by the rib.