Deposition of solid semiconductor compositions and novel semiconductor materials

摘要

Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions such as (GaAs)1-xSix, (GaAs)1-x, Gex, (InSb)1-x Six, (InSb)1-xGex, (InAs)1-xSix and (InAs)1-x Gex (where x is a number greater than about 0.01, and x+(1-x)=1, and GaxAsySiz, GaxAsyGez, InxSbySiz, InxSbyGez, InxAsySiz, InxAsyGez and InxSbyAsz (where x, y and z are numbers greater than about 0.01, and x+y+z=1).