发明名称 |
Tantalum semiconductor contacts and method for fabricating same |
摘要 |
A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.
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申请公布号 |
US4214256(A) |
申请公布日期 |
1980.07.22 |
申请号 |
US19780941100 |
申请日期 |
1978.09.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP |
发明人 |
DALAL, HORMAZDYAR M;GHAFGHAICHI, MAJID;KASPRZAK, LUCIAN A;WIMPFHEIMER, HANS |
分类号 |
H01L21/285;H01L23/532;H01L29/47;(IPC1-7):H01L23/48;H01L29/46;H01L29/54 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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