Semiconductor device having a MOS-capacitor

摘要

A semiconductor element having a MOS-capacitor between a zone provided in an epitaxial layer on a substrate and a conductive layer on an insulating layer above the zone. The stray capacitance between the zone and the substrate of the opposite conductivity type is considerably reduced in that the zone in the semiconductor body is surrounded by a further zone of the opposite conductivity type. The further zone may be applied to a fixed potential via a connection electrode.