METHOD OF FORMING BURIED LAYERS BY ION IMPLANTATION

摘要

A forming method of impurity buried layer and an etching method of removing the bombardment damage are disclosed. The buried layer(11) is formed by accelerating impurity ion to silicon substrate(10). When the substrate is heated at a temp. of 900-1400≦̸C to difuse deeply impurities into substrate inside, the Sio2 films is formed on the substrate whose destructed layer is covered with sio2 layer. After the sio2 layer is etched to remove the destructed layer, the epitaxial layer(13) is formed on the substrate.