发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent temperature rise in a semiconductor device by a method wherein, when a semiconductor chip is fitted on a base and a lead is fitted on top of this, heat discharging area on the lead side is made as large as possible and the amounts of heat discharge on the base side and the lead side are made nearly equal. CONSTITUTION:In center depression 1a of base 1 combining a cooling fin, made of iron or copper, silicon chip 8 is fixed by using solder 7, and further, on chip 8, lead wire 4 is fixed by using solder 7 again. Next, the outer side of chip 8 is protected by passivation material 9 made of sylicon rubber, or the like, and terminal seat 2 is fixed to the projected side of base 1. In this structure, both ends of terminal 5 are bent and these parts are fitted into the side walls of terminal seat 2. At this time, the surface area of terminal 5 is chosen at about 10 times the surface area of chip 8. By this, heat is discharged from both lead part and fin part so that temperature rise is reduced.</p>
申请公布号 JPS5595353(A) 申请公布日期 1980.07.19
申请号 JP19790001309 申请日期 1979.01.12
申请人 HITACHI LTD;HITACHI HARAMACHI DENSHI KOGYO 发明人 KAWASAKI NOBORU;SAKAGAMI TADASHI;NARITA KAZUTOYO;NAKASHIMA MOTOJI;YASUDA TOMIROU;KUSHIMA TADAO
分类号 H01L25/07;H01L25/04 主分类号 H01L25/07
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