| 摘要 |
PURPOSE:To prevent parasitic oscillation etc. in a high frequency semiconductor device, by setting fewer number of connection fine wires for common terminal in input side than that in output side. CONSTITUTION:Terminals for input 6, output 7 and common 8, 9 are set on metalized layers 2-5 being on an insulation base 1, and a bridge part 10 shorting the terminals 8 and 9 facing each other and a metalized layer 14 are made. Emitter connection wires 13, 16 are applied from a transistor element 11 soldered on the base 1 to the bridge part 10 and the layer 14. At this time, the connection wires 13 are five and the connection wires 16 are three. They are arranged alternately and in paralell, and the number of wires 16 is less than that of wires 13. In this constitution, it enable to reduce the effect of mutual inductance between the emitter and base wirings and to eliminate almost unstable phenomenon of parasitic oscillation etc. which is imperfect in ordinary structure, and also the gain drop is negligible. |
