| 摘要 |
To produce very fine photolacquer structures in the mfr. of semiconductors, so-called hard masks are applied for irradiating the lacquer layer by UV light. The masked side of the substrate then receives a sputtered or vapour-deposited metal layer, followed by a treatment with solvents to remove the photoresist. After the usual exposure and before the development, a second brief exposure is carried out through the glass carrier over the full area. This ensures a satisfactory lift-off for the metal layer above the photolacquer structures. |
