发明名称 SEED FOR EPITAXIAL SOLIDIFICATION
摘要 A seed and method for epitaxial solidification of materials, a preferred seed having at least a portion with a melting point 20 DEG -45 DEG C. depressed from that of the alloy being solidified into an article. Boron and silicon are preferably added to nickel superalloys seeds when directionally solidified columnar grain and single crystal articles are formed. Improved seeds also have surface compositions which promote the dissolution of surface contamination films that interfere with epitaxy.
申请公布号 GB2037635(A) 申请公布日期 1980.07.16
申请号 GB19790042219 申请日期 1979.12.06
申请人 UNITED TECHNOLOGIES CORP 发明人
分类号 C30B19/00;B22D27/04;C30B11/00;C30B11/14;C30B21/00;C30B21/02;C30B29/52 主分类号 C30B19/00
代理机构 代理人
主权项
地址