| 摘要 |
1,070,519. Field effect transistors. STANDARD TELEPHONES & CABLES Ltd. April 29, 1966, No. 18855/66. Heading H1K. A field effect transistor, Fig. 10, is made by epitaxially depositing a thin uniform layer of P-type silicon on a P+ silicon substrate 6, removing the layer, apart from a series of parallel strips, by air abrasion through a mask, depositing phosphorus or arsenic doped N + material epitaxially over the strips, lapping flat to re-expose the strips, and finally forming a P+ layer 14 interconnecting the strips by diffusion or epitaxial deposition. The width of the strips constituting the channel regions of the finished device may be reduced prior to the final step by heating to diffuse impurity laterally into them from the N + material. Part of P + layer 14 is removed subsequently to expose the N+ gate, source and gate electrodes are provided by evaporation and the device soldered to a header. |
