Electron beam system with character projection capability

摘要

An electron beam system useful in microfabrication of large scale integrated circuit patterns, particularly those of repetitive nature. The electron beam system includes beam shaping and aperture means disposed between an electron beam source and a target area which permit formation and projection of preselected entire characters or portions thereof into the target area for writing upon a wafer at that location. The pattern cells of such characters may contain as many as 1600 image points which are addressed and projected in parallel, thereby greatly reducing the handling requirements for pattern data as opposed to the techniques utilized in prior art scanning electron beam systems. The system further includes means for correcting for spherical aberration arising in the projection of images comprising a large number of parallel image points.