| 摘要 |
<p>PURPOSE:To join metallic bumps each other and obtain a highly reliable bumps which are free from dislocation and distortion, by forming metallic bumps which connect one semiconductor element to the other element each other by using a cylindrical magnetic substance and coating the circumference of its magnetic substance with a metallic film for connection, thereby bonding a metallic bump onto the other one each other after causing the pointed ends of the magnetic substance to be magnetized so that they may have different magnetic poles. CONSTITUTION:An N-type layer 43 is formed on an epitaxial layer 42 of a CdTe substrate 41 which forms one of compound semiconductor substrates and a metallic film 45 for connection is formed. A magnetic substance 27 consisting of cylindrical ferrite is formed on the film 45 and the circumference of its magnetic substance 27 is coated with a metallic film 29 for connection. Further, after forming a P-type layer 47 on the other Si substrate 46, a metallic film 49 for connection is formed and, after forming a magnetic substance 28 consisting of cylindrical ferrite on the metallic film 49, a metallic film 30 for connection is deposited and formed around the magnetic substance 28. Then, the pointed end 28A of the magnetic substance 28 is magnetized so that it has an N pole. And the magnetic field is applied to the pointed end of the magnetic substance 27 so that it has an S pole. Subsequently, contact is just made between metallic bumps 25 and 26 which are formed on the substrates 41 and 46 and both bumps are joined each other.</p> |
